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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4300 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 900 800 7 5 10 2.5 UNIT V V V A A A W ae ae Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 75 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4300 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; IB=0 IC=2A;IB=0.4A IC=2A;IB=0.4A VCB=800V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=4V IE=-0.5A ; VCE=12V VCB=10V;f=1MHz 10 6 MIN 800 0.5 1.2 100 100 30 MHz pF |I |I TYP. MAX UNIT V V V A A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB Switching times ton tstg tf Fall time Turn-on time CHA IN Storage time E SEM NG IC=2A;IB1=0.3A;IB2=-1A; RL=125| ;VCC=250V OND IC TOR UC 75 1 5 1 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4300 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4300 CHA IN E SEM NG OND IC TOR UC 4 |
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